ECR/RF PECVD Deposition System

ECR/RF PECVD Deposition System

The integrated double chamber electron cyclotron resonance (ECR) / radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system is available for the deposition of Si-based and C-based amorphous, microcrystalline, and polycrystralline materials, such as a-Si:H, mc-Si, nc-SiC, a-SiOx, a-SiNx, a-SiCx, a-SiOxNy, a-C:H, a-CN:H. 

Available gas lines for RF-PECVD reactor

• SiH4 ( 60 sccm maximum gas flow rate)
• CH4 (  70 sccm maximum gas flow rate)
• NH3 (146 sccm maximum gas flow rate)
• CO2 (  72 sccm maximum gas flow rate)
• H2   (202 sccm maximum gas flow rate)

Available gas lines for ECR-PECVD reactor - downstream

• SiH4 ( 60 sccm maximum gas flow rate)
• CH4 (  70 sccm maximum gas flow rate)
• NH3 (146 sccm maximum gas flow rate)
• CO2 (  72 sccm maximum gas flow rate)
• H2   (202 sccm maximum gas flow rate)

Available gas lines for ECR-PECVD reactor - upstream

• H2   (101 sccm maximum gas flow rate)
• Ar    (139 sccm maximum gas flow rate)

Pumping system

• separated pumping system for each reactor
• turbomolecular and  mechanical pump in sequence
• all pumps purged by nitrogen
• ulimate vacuum 1E-8 Torr

Heating unit

• maximum substrate temperature ~350 °C

Other features

• Load lock chamber for improved film purity
• Deposition pressures:
  - RF-PECVD:   100 mTorr - 1 Torr
  - ECR-PECVD: 10 - 25 mTorr
• 4" maximum substrate diameter