LPCVD Deposition System

LPCVD deposition system characteristics 

The low temperature chemical vapor deposition (LPCVD) technique is available for the deposition of Si-based epitaxial, microcrystalline, and polycrystralline materials, such as Si and SiC. 

Available gas lines

• SiH4 (50 sccm maximum gas flow rate)
• CH4 (50 sccm maximum gas flow rate)
• H2   (5 slm maximum gas flow rate)

Pumping system

• turbomolecular and  mechanical pump in sequence
• all pumps purged by nitrogen
• ulimate vacuum 1E-8 Torr

Heating unit

• maximum substrate temperature ~1000 °C

Other features

• Deposition pressures: 0.1-10 Torr
• 4" maximum substrate diameter