LPCVD deposition system characteristics
The low temperature chemical vapor deposition (LPCVD) technique is available for the deposition of
Si-based epitaxial, microcrystalline, and polycrystralline materials, such as Si and SiC.
Available gas lines
- SiH4 (50 sccm flux)
- CH4 (50 sccm flux)
- H2 (5 slm flux)
Pumping system
- turbomolecular and mechanical pump in sequence
- all pumps purged by nitrogen
- ulimate vacuum 10-8 Torr
Heating unit
- maximum substrate temperature ~1000 °C
Other features
- Deposition pressures: 0.1-10 Torr
- 4" maximum substrate diameter
