Growth Systems
ECR-PECVD and RF-PECVD
Main features
The deposition system is equipped with two deposition chambers, each of which is devoted to a different plasma-assisted
growth technique.
- Electron Cyclotron Resonance PECVD deposition chamber
- Radio Frequency (capacitive discharge) PECVD deposition chamber
- Load-lock system for substrates introduction and trasfer
RF-PECVD deposition chamber characteristics
The radio-frequency - plasma enchanced chemical vapor deposition (RF-PECVD) chamber allows the deposition
of Si-based amorphous and microcrystalline materials, such as a-Si:H, a-SiC:H, a-SiN:H, a-SiCON:H.
Available gas lines
- SiH4, CH4, NH3, CO2 and H2
Pumping system
- turbomolecular and mechanical pump in sequence
- all pumps purged by nitrogen
- ulimate vacuum 10-8 Torr
Heating unit
- maximum substrate temperature ~350 °C
Plasma generation
- radio frequency (13.56 MHz) capacitive discharge
- maximum power 50 W
ECR- PECVD deposition chamber characteristics
The electron cyclotron resonance - plasma enchanced chemical vapor deposition (ECR-PECVD) chamber allows the deposition of Si-based microcrystalline materials, such as mc-Si and mc-SiC, as well as C-based amorphous materials, such as a-C:H and a-CN:H.
Available reactive gas lines
- SiH4, CH4, NH3, CO2 and H2
Available carrier gas lines
Pumping system
- turbomolecular and mechanical pump in sequence
- all pumps purged by nitrogen
- ulimate vacuum 10-8 Torr
Heating unit
- maximum substrate temperature ~500 °C
Plasma generation
- microwave (2.45 GHz) ECR plasma source
- maximum microwave power 850 W
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