ECR/RF PECVD deposition system
ECR/RF PECVD Deposition System
ECR/RF PECVD Deposition System
The integrated double chamber electron cyclotron resonance (ECR) / radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system is available for the deposition of Si-based and C-based amorphous, microcrystalline, and polycrystralline materials, such as a-Si:H, mc-Si, nc-SiC, a-SiOx, a-SiNx, a-SiCx, a-SiOxNy, a-C:H, a-CN:H.
Available gas lines for RF-PECVD reactor
- SiH4 ( 60 sccm maximum gas flow rate)
- CH4 ( 70 sccm maximum gas flow rate)
- NH3 (146 sccm maximum gas flow rate)
- CO2 ( 72 sccm maximum gas flow rate)
- H2 (202 sccm maximum gas flow rate)
Available gas lines for ECR-PECVD reactor - downstream
- SiH4 ( 60 sccm maximum gas flow rate)
- CH4 ( 70 sccm maximum gas flow rate)
- NH3 (146 sccm maximum gas flow rate)
- CO2 ( 72 sccm maximum gas flow rate)
- H2 (202 sccm maximum gas flow rate)
Available gas lines for ECR-PECVD reactor - upstream
- H2 (101 sccm maximum gas flow rate)
- Ar (139 sccm maximum gas flow rate)
Pumping system
- separated pumping system for each reactor
- turbomolecular and mechanical pump in sequence
- all pumps purged by nitrogen
- ulimate vacuum 1E-8 Torr
Heating unit
- maximum substrate temperature ~350 °C
Other features
- Load lock chamber for improved film purity
- Deposition pressures:
- RF-PECVD: 100 mTorr - 1 Torr
- ECR-PECVD: 10 - 25 mTorr - 4" maximum substrate diameter