OXFORD ICPCVD COBRA 300

The ICP-CVD allows to deposit a large portfolio of high quality films from room temperature to 400°C:

• Dielectrics: oxides, nitrides, metal oxides
• High quality films with low BOE etch rate
• Refractive Index Control
• Low Film Stress
• Very dense films – close to thermal oxide -
• Gap fill 2:1 aspect ratio features based on 500 nm width gap
• ICPCVD results in higher density films at low temperatures (<150°C) with respect to PECVD
• ICPCVD will give good film qualities at much lower temperatures than PECVD

ICPCVD improved features:

• Load-Lock
• Software interface
• Avoid highly hazardous gases (NH3, H2)
• Process Gas Lines (Digital MFCs): SF6, SH4, O2, N2, Ar.
• Low damage process for nanometer devices requirement
• Isolation/passivation/planarisation
• Flexibility for making capacitors and other passive devices after gate level
• Lift off capabilities - reducing fabrication cycle time
• New advanced plasma Clean